TEM Characterization of 3D InAs QDs Grown under Subcritical Deposition
نویسندگان
چکیده
منابع مشابه
Modeling and characterization of InAs/GaAs quantum dot lasers grown using metal organic chemical vapor deposition
We report on the lasing characteristics of threeand five-stack InAs/GaAs quantum dot QD lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm no reflectivity coatings . The unamplified spontaneous emission and Z ratio as a function of injection curre...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2013
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927613003656